| 摘要 |
PURPOSE: A method of removing growth particles of a photomask is provided to improve yield of a semiconductor device by performing two-step cleaning processes using DIW(DeIonized Water) added with O3 instead of sulfuric acid solutions. CONSTITUTION: Organic substance is removed by cleaning firstly a photomask using the first DIW added with O3(S10). Inorganic substance and metal residues are removed by etching the surface of the photomask using a diluted HF or HCL solutions(S20). The second cleaning process is performed to oxidize the photomask by using the second DIW added with O3(S30). The first DIW contains O3 of 1 to 100 PPM. The second DIW contains O3 of 1 to 100 PPM.
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