| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent degradation of a diffusion barrier layer by using a ternary amorphous layer of WTaN as the diffusion barrier layer. CONSTITUTION: A lower insulating layer with a lower metal line(11) is formed on a substrate. An IMD(Inter-Metal Dielectric)(13) is formed to expose the lower metal line and to define an upper metal line region. A ternary amorphous layer(17) of WTaN as a diffusion barrier layer is formed on the resultant structure including the upper metal line region and densified by RTA(Rapid Thermal Annealing) under oxygen atmosphere. Then, an upper metal line(19) is formed.
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