GATE ELECTRODE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A gate electrode of a semiconductor device and a manufacturing method thereof are provided to reduce threshold voltage by forming a Ti-rich Ru1-xTix film with low work function on an nMOS region and a Ru-rich Ru1-xTix film with high work function on a pMOS region. CONSTITUTION: A gate insulating layer(11) is formed on an nMOS region and a pMOS region. A Ti-rich Ru1-xTix film(12) with low work function is formed on the gate insulating layer of the nMOS region. A Ru-rich Ru1-xTix film(13) with high work function is formed on the gate insulating layer of the pMOS region. A diffusion barrier layer(14) is formed on the resultant structure. A metal film(15) is formed on the diffusion barrier layer.