METHOD FOR ETCHING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a metal line of a semiconductor device is provided to minimize micro-loading effect by using an additional dry-cleaning containing F-based gas. CONSTITUTION: An arc layer is selectively etched by first dry-cleaning using O2 gas and etched by second dry-cleaning using F-based gas containing Cl2 of 100-200 sccm and CHF3 of 5-30 sccm, thereby forming a metal line. In the step, the source power sets 500-1200 Watt and the bias power sets 0-10 Watt.