METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a shallow trench isolation layer of a semiconductor device is provided to perform easily a trench gap-fill process and prevent the leakage current by rounding a top edge of a trench. CONSTITUTION: An oxide layer and a nitride layer are laminated on a silicon substrate(101). An etch mask is formed thereon and the etch mask is patterned. An anisotropic etch process for the oxide layer and the nitride layer is performed by using the etch mask. A top trench is formed by performing an isotropic etch process using the etch mask. A trench is formed by performing a dry-etch process using the etch mask. A trench isolation layer(111) is formed by depositing a trench filling material on a structure including the trench.