METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent the oxidation of a lower electrode by performing the oxidation processing using N2O, NO, O2 or O3 gas under low pressure. CONSTITUTION: A storage node electrode(20) made of a polysilicon layer is formed on a substrate. A nitride layer(22) is formed on the storage node electrode. An oxide layer(24) is formed by oxidizing the nitride layer under atmospheric pressure or low pressure. A reaction gas is one selected from group consisting of N2O, NO, O2, H2O and O3. A plate electrode(26) is then formed on the oxide layer.