METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to use KrF excimer layer instead of ArF excimer layer as a lithography tool and improve the operation characteristics of the semiconductor device by controlling the lengths of a channel and LDD(Lightly Doped Drain). CONSTITUTION: A silicon substrate(1) is partially exposed by selectively etching a first nitride layer(3) and an isolation layer(2). An epitaxial active region(4) is formed in the etched portion. A first oxide layer(5) is formed on the resultant structure. A source and a drain(7a,7b) are formed on the epitaxial active region. The active region is exposed by carrying out a wet cleaning process. The length of an LDD(Lightly Doped Drain) is controlled by using a wet cleaning target. An LDD implantation is carried out on the resultant structure. A second nitride layer(8) and a second oxide layer(9) are sequentially formed on the resultant structure. The active region is partially exposed by selectively removing the first oxide layer. A local channel implantation and a channel VT implantation are carried out on the resultant structure through the active region.