| 摘要 |
PURPOSE: A method for forming an SAC(Self-Aligned Contact) of a semiconductor device is provided to prevent over-etching of an oxide spacer by forming a nitride layer on the oxide spacer. CONSTITUTION: The first and second insulating spacers(41,43) having different etching selectivity are formed at both sidewalls of gate electrodes. A landing plug(45) is formed between the gate electrodes. The first insulating spacer is partially removed. A nitride layer(47) is filled in the etched portion of the first insulating spacer. The first insulating spacer is made of an oxide layer.
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