| 摘要 |
PURPOSE: A method for forming a copper line of a semiconductor device is provided to prevent diffusion of copper into an insulating layer, and to remove overhang by depositing thickly a diffusion barrier layer at sidewalls of damascene pattern. CONSTITUTION: SiN layers(5,7) and low-k oxide layers(6,8) are alternately deposited on a substrate having a lower copper line(4). By selectively etching the top low-k oxide layer(8), a via hole is formed. A damascene pattern is formed by selectively etching the low-k oxide layer(6) to remain the SiN layer(5). A diffusion barrier layer(11) is formed at sidewalls of the damascene pattern. Then, an upper copper line(12) is formed by filling a copper film in the damascene pattern.
|
