ULTRA-THIN EPI-CHANNEL PMOS TRANSISTOR OF DUAL DOPING STRUCTURE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An ultra-shallow epi-channel PMOS(p-type metal oxide semiconductor) transistor of a dual doping structure is provided to embody an ultra-shallow SSR epi-channel structure in which a channel depth of 20 nanometer or lower can be formed and to fabricate a PMOS FET(field effect transistor) having an ultra-short channel of 30 nanometer by forming a channel doping layer in which a maximum density is 1x 10¬19 atoms/cubic centimeter and a ratio of a maximum density to a surface density is 100 or higher. CONSTITUTION: Dopants having different diffusion rates are dual-doped to form a channel doping layer under the surface of a semiconductor substrate(21). A restoring annealing process is performed to activate the dopants implanted into the channel doping layer. A surface treatment process is performed to remove the native oxide layer on the channel doping layer. A silicon epi layer(26) is grown on the channel doping layer by a selective epitaxial growth method.