METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to prevent leakage current in the contact hole by forming an SiN spacer at both sidewalls of the contact hole. CONSTITUTION: An insulating layer having a contact hole is formed on a semiconductor substrate(1). An Si layer is deposited along the upper surface of the resultant structure. An Si spacer(7) is formed at both sidewalls of the contact hole by carrying out an anisotropic etching process on the Si layer under Cl2 and HBr gas atmosphere. The Si spacer is transformed into an SiN spacer by carrying out an NH3 plasma treatment on the Si spacer. A diffusion barrier(3) is deposited on the resultant structure.