发明名称 Floating gate memory cell, method for fabricating it, and semiconductor memory device
摘要 For particularly flexible and space-saving information storage, in the case of a floating gate memory cell and a corresponding semiconductor memory device, the invention includes providing a floating gate configuration with a plurality of floating gates. Each of the floating gates is configured for substantially independent information storage. As a result, a plurality of information units can be stored independently of one another in the memory cell.
申请公布号 US6760252(B2) 申请公布日期 2004.07.06
申请号 US20020283913 申请日期 2002.10.30
申请人 INFINEON TECHNOLOGIES AG 发明人 MIKOLAJICK THOMAS
分类号 H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):G11C16/04 主分类号 H01L21/28
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