SLURRY FOR CMP OF TUNGSTEN AND FORMING METHOD TUNGSTEN PLUG OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A slurry for CMP of tungsten and a method for forming a tungsten plug of a semiconductor device using the same are provided to prevent plug recess and erosion by using slurry including ionization oxidant such as HMnO4 and H2CrO4. CONSTITUTION: An interlayer dielectric(22) is formed on a substrate(21). A contact hole is formed by selectively etching the interlayer dielectric. A metal barrier layer(24) and a tungsten film are sequentially formed in the contact hole. A tungsten plug(25a) is formed by polishing the tungsten film and the metal barrier layer using slurry including ionization oxidant of HMnO4 or H2CrO4 of 0.1-5 weight percent.