| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve reliability by forming an insulating spacer between a plate electrode and a bit line contact plug. CONSTITUTION: A lower insulating layer(43) with a storage node contact plug(45a) and the first contact plug(45b) is formed on a substrate. By selectively etching a storage node oxide layer(47), the storage node contact plug is exposed. A capacitor with a plate electrode(51) is formed to connect the storage node contact plug. The first interlayer dielectric(53) is formed. An insulating spacer(55) is formed at both sidewalls of the plate electrode and the first interlayer dielectric. A bit line contact plug(61) is formed to connect the first contact plug.
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