发明名称 |
METHOD FOR FORMING TEST PATTERN WITHIN MASK FOR BIAS |
摘要 |
PURPOSE: A method for forming a test pattern within a mask for bias is provided to search previously a condition for obtaining proper bias by using only a designed module. CONSTITUTION: A white isolated line of a left side and a dense line of a right side are formed by using the same design. A unit reference cell is formed on a mask by using an inside left dense line and a right isolated line. The unit reference cell is formed with a unit block module. The unit reference cell has the difference as much as the arbitrary size. A mask forming process is performed to form a mask including the unit block modules by inserting each unit block module into each region having different pattern density. The dense line is formed by 1 to 1 pitch.
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申请公布号 |
KR20040060258(A) |
申请公布日期 |
2004.07.06 |
申请号 |
KR20020086804 |
申请日期 |
2002.12.30 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
KIM, U YONG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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