发明名称 METHOD FOR FORMING TEST PATTERN WITHIN MASK FOR BIAS
摘要 PURPOSE: A method for forming a test pattern within a mask for bias is provided to search previously a condition for obtaining proper bias by using only a designed module. CONSTITUTION: A white isolated line of a left side and a dense line of a right side are formed by using the same design. A unit reference cell is formed on a mask by using an inside left dense line and a right isolated line. The unit reference cell is formed with a unit block module. The unit reference cell has the difference as much as the arbitrary size. A mask forming process is performed to form a mask including the unit block modules by inserting each unit block module into each region having different pattern density. The dense line is formed by 1 to 1 pitch.
申请公布号 KR20040060258(A) 申请公布日期 2004.07.06
申请号 KR20020086804 申请日期 2002.12.30
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, U YONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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