| 摘要 |
PURPOSE: A polysilicon thin film transistor and a method for manufacturing an array substrate including the same are provided to form an interfacial insulation film as double layer and form a contact hole of the interfacial insulation film by three steps, that is, dry, wet and dry etchings, thereby improving a contact characteristic between source/drain electrodes and an active layer and enhancing a driving characteristic of an LCD(Liquid Crystal Display) panel. CONSTITUTION: A double layer insulation film(118,118'), as the third insulation layer, is formed at the entire surface of the gate electrode, the second active region(116,117) and the first insulation layer(102). The double layer insulation film comprises an upper layer insulation film(118) and a lower layer insulation film(118'). A photoresist layer(120) is formed on the upper layer insulation film(118). After performing an exposure processing, the second region(116,117) is developed. After removing the photoresist, the upper layer insulation film(118) is exposed. Through a wet etching method, a lower layer insulation film(118') exposed by the etched upper layer insulation film(118) is etched, so that polysilicon layers(116,117) doped impurities are exposed.
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