METHOD OF MANUFACTURING DOUBLE GATE OXIDE LAYER USING DUMMY GATE AND DOPING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a double gate oxide layer is provided to improve the performance and reliability of a semiconductor device by performing ion-implantation and using a dummy gate. CONSTITUTION: An STI(Shallow Trench Isolation)(1) is formed in a substrate. The first gate oxide pattern and an SiN pattern as a dummy gate are formed on the resultant structure. An LDD(Lightly Doped Drain)(3), a spacer(4) made of TEOS(Tetra-Ethyl-Ortho-Silicate) and a source/drain region are sequentially formed. An oxide layer(5) as an intermetal dielectric is deposited, and the oxide layer is planarized by using CMP(Chemical Mechanical Polishing) and an etch-back. The dummy gate is removed therefrom by using a hot phosphoric acid. Ion-implantation is selectively performed to form a thick gate oxide layer under a gate, thereby forming a double gate oxide layer. The ion-implantation is performed by using As ions.