| 摘要 |
PURPOSE: A planarization method of a semiconductor device is provided to improve the uniformity of CMP(Chemical Mechanical Polishing) by differentiating the thickness of a nitride layer as an etch barrier layer. CONSTITUTION: A silicon substrate(200) is prepared. A pad oxide layer(202) and a nitride layer are sequentially formed on the substrate. A nitride pattern(204) is formed by patterning the nitride layer to have different thickness according to the distance of an active region. A trench is then formed by etching the silicon substrate using the nitride pattern as a mask. Then, the trench is formed with a field oxide layer.
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