SOURCE RESISTANCE IMPROVEMENT STRUCTURE OF FLASH MEMORY AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A structure of a flash memory and a manufacturing method thereof are provided to improve considerably source resistance by forming a common source line having a low resistance in the second trench alone using ion-implantation. CONSTITUTION: An active region(1) and a trench region are alternately formed along the bit line direction. The trench region includes the first trench region and the second trench region(8b). The first trench region is formed at both sides of the active region along the bit line direction. The second trench is formed between the first trenches at the periphery of the active region. A common source line(12) is formed in the second trench region by using ion-implantation.