发明名称 Filling plugs through chemical mechanical polish
摘要 A scheme for filling plugs through chemical mechanical polishing comprises depositing a malleable conductive layer over a dielectric layer having openings formed therein. The malleable conductive layer is deposited such that a liner is formed within the openings, however the openings are not completely filled. A chemical mechanical polishing process using an alumina based slurry at a neutral or slightly basic pH and no oxidizer is used to smear the malleable conductive layer sufficiently to fill the remainder of the openings in the dielectric layer forming filled or substantially filled plugs.
申请公布号 US6757971(B2) 申请公布日期 2004.07.06
申请号 US20010943582 申请日期 2001.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 SINHA NISHANT
分类号 H01L21/321;H01L21/768;H01L45/00;H05K3/40;(IPC1-7):H01K3/10 主分类号 H01L21/321
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