CONTACT HOLE STRUCTURE OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A contact hole structure of a semiconductor device and a forming method thereof are provided to improve the margin of an RIE(Reactive Ion Etching) process without over-etch or under-etch by forming previously a metal film on a line pattern. CONSTITUTION: The first interline dielectric(4) is formed on a silicon substrate(2). The first metal film(6) and an insulating layer(8) are sequentially formed on the first interline dielectric. The first metal film is exposed by etching selectively the insulating layer using a photo pattern. The second metal film(10) is deposited on the first metal film. A plurality of line patterns are formed by patterning selectively the first metal film. At this time, a predetermined line pattern includes the second metal film. The second interline dielectric(12) is deposited thereon. A contact hole(14) for exposing the second metal film is formed in the second insulating layer.