| 摘要 |
PURPOSE: A method is provided to improve capacitance and stability by improving leaning when forming a DRAM capacitor of a cylindrical structure. CONSTITUTION: An etch stop layer(2) and a capacitor oxide layer(3) are sequentially formed on a substrate with a storage node plug(1). A capacitor hole is formed to expose the storage node plug by selectively etching the capacitor oxide layer. A polysilicon layer(4) is deposited on the resultant structure. A buffer oxide layer(5) is then filled in the capacitor hole. The buffer oxide layer and the polysilicon layer are polished by CMP. A support substance, such as photoresist is formed on the resultant structure. By patterning the support substance to line shape according to the minor axis of capacitor, a support pattern(7) is formed. The capacitor oxide layer and the buffer oxide layer are performed by dip-out. The support pattern is removed.
|
