| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of obtaining a stable capacitor hole and simplifying the process. CONSTITUTION: Gate patterns(33) are formed on a semiconductor substrate(30) with active regions(32a). An interlayer dielectric(34) and a capacitor insulating layer(36) are sequentially formed on the resultant structure. A capacitor hole(37) is formed to expose the active regions by patterning the capacitor insulating layer and the interlayer dielectric. A lower electrode is formed in the capacitor hole. A dielectric film and an upper electrode are sequentially formed on the lower electrode.
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