| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to restrain the growth of native oxide when forming ONO layer as an IPO(Inter-Poly Oxide) by using nitridation treatment of polysilicon. CONSTITUTION: A polysilicon layer(4) as a gate is deposited on a silicon substrate(1). Nitriation treatment is performed by implanting N2 ions into the polysilicon layer. A gate pattern is formed by patterning the polysilicon layer. An ONO layer(6) is formed by sequentially depositing the first oxide layer, a nitride layer and the second oxide layer on the resultant structure.
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