METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to improve EM(ElectroMigration) properties and to reduce resistance by forming the metal line at both sidewalls of a line core to divide current flow. CONSTITUTION: A contact plug(16) is formed on the first metal line(10) through the first insulating layer(12). A line core(24) is formed on the contact plug through the second insulating layer(20) and an etch stop layer(18). The line core is partially exposed by dry-etching selectively the second insulating layer. A conductive layer is deposited on the resultant structure. The second metal line(26) is formed at both sidewalls of the exposed line core by performing a blanket etch-back on the conductive layer.