| 摘要 |
PURPOSE: A method and an apparatus for etching semiconductor wafers are provided to perform etching on a silicon nitride film with high precision even in case of different number of wafers. CONSTITUTION: A apparatus for etching semiconductor wafers includes an etching bath(1) in which an etchant is filled, a counter(12), a computer(13), a first heater(4), and a temperature adjustment unit(14). The counter counts the number of silicon wafers to be charged in the etching bath before charging the wafers into the etching bath. The computer calculates a temperature drop of the etchant at a time of charging the semiconductor wafers based on the number of wafers, and sets an initial temperature B of the etchant at the time of charging the semiconductor wafers to be higher than a predetermined etching temperature A by the temperature drop. The first heater is disposed on at least a part of an outer wall of the etching bath. The temperature adjustment unit controls heating of the first heater to control a temperature of the etchant at the initial temperature B or the predetermined etching temperature A.
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