| 摘要 |
PURPOSE: A method for forming a plug of a semiconductor device is provided to obtain sufficient process margin in LPC(Landing Plug Contact) processing by improving the uniformity of an interlayer dielectric. CONSTITUTION: A gate stacked structure(200) including a gate(22) and a hard mask(23) is formed on a semiconductor substrate(20). A spacer(24) is formed at both sidewalls of the gate stacked structure. The first interlayer dielectric is filled between the spacers. The first interlayer dielectric is planarized to expose the hard mask by CMP(Chemical Mechanical Polishing). The second interlayer dielectric is formed on the first interlayer dielectric. A contact hole is formed to expose the substrate by etching the second and first interlayer dielectric. A landing plug is formed in the contact hole.
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