METHOD FOR MANUFACTURING DUAL GATE OXIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a dual gate oxide layer of a semiconductor device is provided to simplify manufacturing process without using an additional process. CONSTITUTION: A gate oxide layer, a conductive layer and a hard mask(6) are sequentially stacked on a substrate defined by a cell and peripheral region. A gate pattern is formed by patterning the stacked structure. By performing gate re-oxidation processing, a thick gate oxide layer(2A) is formed on the cell region and a thin gate oxide layer(2B) is formed on the peripheral region.