METHOD FOR REDUCING CONTACT RESISTANCE OF SELF-ALIGNED BIT LINE USING TITANIUM-ZIRCONIUM ALLOY SILICIDE

摘要

PURPOSE: A method is provided to reduce contact resistance of a self-aligned bit line by removing a native oxide between an LPC(Landing Poly-plug Contact) and a substrate using a TiZrSi2 layer. CONSTITUTION: An insulating layer(4) with a self-aligned bit line contact is formed on a silicon substrate(1). Titanium and zirconium are deposited on the resultant structure. A TiZrSi2 layer(7) is formed on the exposed silicon substrate in the bit line contact by annealing. A metal nitride layer on the insulating layer is selectively removed by wet-etching. A bit line(8) is then formed by depositing polysilicon on the resultant structure.