| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent out-diffusion of dopants in a contact plug by using double selective epitaxial growth. CONSTITUTION: A junction layer(27) is formed in a semiconductor substrate(21). An interlayer dielectric(28) with a contact hole is formed on the substrate to expose the junction layer. A contact plug is filled in the contact hole, wherein the contact plug is provided with a triple structure of an undoped epitaxial silicon layer(30a), a doped epitaxial silicon layer(30b) and a polysilicon layer(30c).
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