| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of preventing bridge between storage nodes and lifting of the storage node. CONSTITUTION: An interlayer dielectric(22) is formed on a substrate(21). A storage node contact(24) is formed to connect the substrate through the interlayer dielectric. The first etch barrier layer(25a), an insulating layer(26) and the second etch barrier layer(25b) are sequentially formed on the interlayer dielectric. By selectively removing the insulating layer, an under-cut is formed between the first and second etch barrier layer. Then, a cylindrical storage node(29) is formed on the resultant structure.
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