| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to prevent adjacent lower electrodes from contacting each other by forming a lower electrode of a cylindrical structure in a vertical storage node hole so as to strengthen the structural intensity of the lower electrode. CONSTITUTION: At least a storage node contact is prepared. An etch barrier layer(25) and a mold oxide layer are formed on a semiconductor substrate(21) whose surface is planar. The mold oxide layer is so etched to make an etch process stop at the etch barrier layer to form a storage node hole of a narrow width in which the width becomes narrow as it goes form to the bottom of the storage node hole so that the sidewall slants. The slanting sidewall of the storage node hole of a narrow width changed to a vertical sidewall. The width of the storage node hole having the vertical sidewall is broadened to form a vertical storage node hole of a wide width exposing the storage node contact. A lower electrode(29) of a cylindrical structure is formed in the vertical storage node hole of the wide width. The mold oxide layer is selectively eliminated.
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