发明名称 Process to form NOL structure for CPP GMR
摘要 It is important for a CPP GMR read head that it have both high resistance as well as high cross-sectional area. This has been achieved by inserting a NOL (nano-oxide layer) though the middle of one or both of the two non-magnetic conductive layers. A key feature is that the NOL is formed by first depositing the conductive layer to about half its normal thickness. Then a metallic film is deposited thereon to a thickness that is low enough for it to still consist of individual islands. The latter are then fully oxidized without significantly oxidizing the conductive layer on which they lie. The remainder of the conductive layer is then deposited to a thickness sufficient to fully enclose the islands of oxide.
申请公布号 US6759084(B1) 申请公布日期 2004.07.06
申请号 US20030455036 申请日期 2003.06.05
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 JU KOCHAN;LI MIN;LIAO SIMON;CHANG JEIWEI
分类号 G11B5/31;G11B5/39;(IPC1-7):B05D5/12 主分类号 G11B5/31
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