发明名称 |
II-VI semiconductor device with BeTe buffer layer |
摘要 |
A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.
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申请公布号 |
US6759690(B2) |
申请公布日期 |
2004.07.06 |
申请号 |
US20030408407 |
申请日期 |
2003.04.07 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
MILLER THOMAS J. |
分类号 |
H01L21/36;H01L33/00;H01L33/28;H01S5/347;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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