METAL LINE OF SEMICONDUCTOR DEVICE HAVING DOUBLE CAPPING LAYER AND FORMING METHOD THEREOF

摘要

PURPOSE: A metal line of a semiconductor device having a double capping layer and a forming method thereof are provided to prevent the leakage by using the double layer formed with silicon nitride/silicon carbide as a capping layer of a damascene line. CONSTITUTION: A metal line of a semiconductor device having a double capping layer includes an interlayer dielectric, a barrier metal layer, a metal layer, and a double capping layer. A line-shaped groove is formed in the inside of the interlayer dielectric(105). The barrier metal layer(150) is formed on an inner wall of the line-shaped groove. The metal layer is formed on the line-shaped groove on the barrier metal layer. An upper surface of the metal layer is formed in parallel to the upper surface of the interlayer dielectric in order to form a metal line. The double capping layer(190) includes a silicon nitride layer(180) and a silicon carbide layer(185), which are coated on the interlayer dielectric, and the metal layer.