METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage of a bit line in a peripheral region by forming a support insulating layer on a hard mask of a cell region. CONSTITUTION: An interlayer dielectric(12) is formed on a substrate(10) defined by a cell region(S) and a peripheral region(P). Bit lines(14) with a hard mask are formed on the interlayer dielectric. A support insulating layer(30) is formed on the hard mask of the cell region to improve topology between the cell and peripheral region. An insulating spacer(16) is formed at both sidewalls of the support insulating layer, the hard mask and the bit line of the cell region. A storage node contact hole is formed by selectively etching the interlayer dielectric. A contact plug(20) is then formed in the contact hole.