| 摘要 |
PURPOSE: A slurry composition for CMP(Chemical Mechanical Polishing) and a method for forming a poly plug of a semiconductor device using the same are provided to prevent Pinocchio defect and loss of a hard mask by using the slurry containing an anionic compound. CONSTITUTION: A composite slurry composition includes an anionic compound, an abrasive and a water. The anionic compound is one selected from group consisting of lauric acid, oleic acid, stearic acid, sodium stearate, sodium lauric sulfate, sodium lauryl ether sulfate, ammonium lauryl sulfate, triethanol ammonium lauryl sulfate, sodoum octyl sulfate, dodecyl benzene sulfonic acid, sodium dodecyl benzene sulfonate, lauryl ether phosphate, and dimethyl laurylamine.
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