| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent recess of a tungsten plug by adding the surfactant of positive charge to CMP slurry for W. CONSTITUTION: An interlayer dielectric(33) is formed on a semiconductor substrate(31). A contact hole is formed by selectively etching the interlayer dielectric. The contact hole is filled with a tungsten film. The first CMP(Chemical Mechanical Polishing) is performed to expose the interlayer dielectric using slurry with pH of 2-3. The second touch polishing is performed to form a tungsten plug(35-1) by adding the surfactant of positive zeta potential to the slurry.
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