| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to improve the property of a PMOS(P-channel Metal Oxide Semiconductor) transistor by restraining defects and out-diffusion at a shallow junction. CONSTITUTION: A gate stacked structure(100) including a gate insulating layer(12), a gate(13) and a hard mask(14) is formed on a substrate(10). A spacer(15) is formed at both sidewalls of the gate stacked structure. An ultra-shallow junction is formed by implanting boron ions at a relatively low temperature compared to the room temperature. The temperature in the ion-implantation is -20¯-100°C by using a cooling unit.
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