| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reducing thermal budget and improving process margin of SAC(Self Align Contact) etching. CONSTITUTION: The first interlayer dielectric(32) is formed on a substrate(31) with a plug(33). A bit line(36) is formed on the first interlayer dielectric. A silicon nitride layer is formed on the resultant structure, wherein the silicon nitride layer has the first thickness for covering the upper of the bit line, the second thickness for covering the side of the bit line, and the third thickness for covering the upper of the interlayer dielectric. By etch-back of the silicon nitride layer, a cover(38a) is formed to surround the bit line. The second interlayer dielectric(34) is formed on the resultant structure. The plug is exposed by SAC etching using the cover. A storage node contact plug(40) is formed to connect the plug.
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