METHOD FOR FORMING METAL BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal bit line of a semiconductor device is provided to prevent degradation of patterns, and to improve resolution by forming an insulating spacer at sidewalls of a damascene pattern. CONSTITUTION: A bit line contact plug(12) is formed to connect a lower conductive layer(10) through the first interlayer dielectric(11). The second interlayer dielectric(13) is formed on the resultant structure. A damascene pattern is formed by selectively etching the second interlayer dielectric. An insulating spacer(15) is formed at both sidewalls of the damascene pattern. Then, a metal film(16) as a bit line is filled in the damascene pattern.