PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A phase shift mask of a semiconductor device and a manufacturing method thereof are provided to be capable of using F2 laser. CONSTITUTION: A phase shift mask comprises a quartz substrate(10) with an optical transmission region and a phase shifting region, an energy absorbent layer(20) formed on the phase shifting region of the quartz substrate, and a phase shifting layer(30) formed on the energy absorbent layer. A tantalum layer is used as the energy absorbent layer(20) and a tantalum silicon oxide layer is used as the phase shifting layer(30).