| 摘要 |
PURPOSE: A method for manufacturing an insulating layer of a semiconductor device is provided to obtain the insulating layer with the thickness of 20Å below by using LPCVD(Low Pressure Chemical Vapor Deposition). CONSTITUTION: A wafer is loaded in a reaction chamber of LPCVD equipment. After rising the temperature in the reaction chamber, an oxide layer is formed by supplying rapidly O2 gas. Purging is performed. These steps are repeatedly performed to form an insulating layer with a desired thickness.
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