| 摘要 |
In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.
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