发明名称 Method and apparatus for charged particle beam exposure
摘要 A plurality of circuit patterns are written by a small number of charged particle beams with a high dimension controllability without using a mask.A desired charge quantity is irradiated on a desired point on a sample by performing irradiation on a charged particle beam section in a superposing manner in order to obtain a predetermined exposure intensity by the charged particle beams constituting a plurality of charged particle beam groups. In addition, the charged particle beams are used, in which current quantities of a plurality of the charged particle beams are made to have a weighted gradation, the desired charged quantity is irradiated, and thus a desired exposure dimension is obtained.
申请公布号 US6759666(B2) 申请公布日期 2004.07.06
申请号 US20010924575 申请日期 2001.08.09
申请人 HITACHI, LTD. 发明人 NAGATA KOJI;YODA HARUO;SATOH HIDETOSHI;TAKAHASHI HIROYUKI
分类号 G03F7/20;H01J37/147;H01J37/302;H01J37/305;H01L21/027;(IPC1-7):G21G5/10 主分类号 G03F7/20
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