METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve topology and process margin by forming a capacitor of an MIM(Metal-Insulator-Metal) structure and a metal line in the same layer. CONSTITUTION: The first insulating layer(2) with the first metal line(3) is formed on a semiconductor substrate(1). The second insulating layer(4) with the second metal line(5) of a dual damascene type is formed on the first insulating layer. The third insulating layer(6) with a trench is formed on the second insulating layer. An MIM capacitor(20) and the third metal line(11a) are sequentially filled in the trench. The fourth metal line(12) for contacting the second metal line is formed in the third insulating layer by using a dual damascene process.