METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL DAMASCENE

摘要

PURPOSE: A method for fabricating a semiconductor device having a dual damascene is provided to reduce damage of a semiconductor substrate by performing an intermittent etch process instead of a continuous etch process. CONSTITUTION: The first insulating layer(20) and the second insulating layer are sequentially formed on a substrate. The second insulating layer pattern(21a) is formed by patterning the second insulating layer. The third insulating layer is formed on the first insulating layer having the second insulating layer pattern. The third insulating layer pattern(22a) is formed by patterning the third insulating layer. The first insulating layer pattern is formed by patterning the first insulating layer. A contact is formed by the first, the second, and the third insulating layer patterns. A conductive material is buried into the contact.