SEMICONDUCTOR MEMORY DEVICE REDUCING NOISE OF REFERENCE VOLTAGE

摘要

PURPOSE: A semiconductor memory device reducing noise of a reference voltage is provided which has a structure to separating a reference voltage of an input buffer from other buffers to prevent the influence of input buffer noise from influencing other buffers. CONSTITUTION: According to a semiconductor memory device, a reference voltage input pin(P2) receives a reference voltage(VREF) from the external. Lead frames(LEADF2,LEADF21) are connected to the reference voltage input pin, and are prolonged by being separated from the reference voltage input pin. Pads(PAD2,PAD21) are separated each other as corresponding to the lead frames respectively. And a plurality of buffers correspond to the pads. The pads and the lead frames are wire-bonded each other.