| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent degradation of a diffusion barrier layer by using an amorphous thin film containing silicon and nitrogen as the diffusion barrier layer. CONSTITUTION: A lower insulating layer with a lower metal line(11) is formed on a substrate. An IMD(Inter-Metal Dielectric)(13) with a damascene pattern is formed to expose the lower metal line. An amorphous film(19) of TiWSiN as a diffusion barrier layer is formed on the damascene pattern and densified by RTA(Rapid Thermal Annealing) under oxygen atmosphere. An upper metal line(21) made of copper is then filled in the damascene pattern.
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