METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent moat at edge portions of a trench by forming partially a linear nitride layer on the trench. CONSTITUTION: A trench is formed by selectively etching a substrate(10) using a pad pattern. A well oxide layer(18) is formed at inner walls of the trench. A linear nitride pattern(32) is formed on the trench, wherein the height of the linear nitride pattern is lower than that of the trench. Then, a field oxide layer(22) is filled in the trench and planarized.